JPH0139231B2 - - Google Patents

Info

Publication number
JPH0139231B2
JPH0139231B2 JP56192578A JP19257881A JPH0139231B2 JP H0139231 B2 JPH0139231 B2 JP H0139231B2 JP 56192578 A JP56192578 A JP 56192578A JP 19257881 A JP19257881 A JP 19257881A JP H0139231 B2 JPH0139231 B2 JP H0139231B2
Authority
JP
Japan
Prior art keywords
light
layer
semiconductor
active layer
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56192578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5893390A (ja
Inventor
Kenichi Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56192578A priority Critical patent/JPS5893390A/ja
Priority to DE8282402152T priority patent/DE3280183D1/de
Priority to EP82402152A priority patent/EP0080945B1/en
Priority to US06/445,045 priority patent/US4607368A/en
Publication of JPS5893390A publication Critical patent/JPS5893390A/ja
Publication of JPH0139231B2 publication Critical patent/JPH0139231B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP56192578A 1981-11-30 1981-11-30 光半導体装置 Granted JPS5893390A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56192578A JPS5893390A (ja) 1981-11-30 1981-11-30 光半導体装置
DE8282402152T DE3280183D1 (de) 1981-11-30 1982-11-26 Optische halbleiteranordnung.
EP82402152A EP0080945B1 (en) 1981-11-30 1982-11-26 Optical semiconductor device
US06/445,045 US4607368A (en) 1981-11-30 1982-11-29 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56192578A JPS5893390A (ja) 1981-11-30 1981-11-30 光半導体装置

Publications (2)

Publication Number Publication Date
JPS5893390A JPS5893390A (ja) 1983-06-03
JPH0139231B2 true JPH0139231B2 (en]) 1989-08-18

Family

ID=16293606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56192578A Granted JPS5893390A (ja) 1981-11-30 1981-11-30 光半導体装置

Country Status (2)

Country Link
US (1) US4607368A (en])
JP (1) JPS5893390A (en])

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60241283A (ja) * 1984-05-16 1985-11-30 Toshiba Corp 集積化学半導体素子
JPH0685432B2 (ja) * 1985-03-18 1994-10-26 株式会社日立製作所 半導体装置
FR2592739B1 (fr) * 1986-01-06 1988-03-18 Brillouet Francois Structure semi-conductrice monolithique d'un laser et d'un transistor a effet de champ et son procede de fabrication
US4804639A (en) * 1986-04-18 1989-02-14 Bell Communications Research, Inc. Method of making a DH laser with strained layers by MBE
US4757197A (en) * 1986-05-01 1988-07-12 Lee Wai Hon Semiconductor laser and detector device
US4905216A (en) * 1986-12-04 1990-02-27 Pencom International Corporation Method for constructing an optical head by varying a hologram pattern
US5003359A (en) * 1989-12-29 1991-03-26 David Sarnoff Research Center, Inc. Optoelectronic integrated circuit
US4995049A (en) * 1990-05-29 1991-02-19 Eastman Kodak Company Optoelectronic integrated circuit
US5221633A (en) * 1991-09-09 1993-06-22 Motorola, Inc. Method of manufacturing a distributed drive optoelectronic integrated circuit
US5335240A (en) * 1992-12-22 1994-08-02 Iowa State University Research Foundation, Inc. Periodic dielectric structure for production of photonic band gap and devices incorporating the same
US5406573A (en) * 1992-12-22 1995-04-11 Iowa State University Research Foundation Periodic dielectric structure for production of photonic band gap and method for fabricating the same
JPH1187850A (ja) * 1997-09-03 1999-03-30 Sharp Corp 窒化物系化合物半導体レーザ素子及びレーザ装置
US6693935B2 (en) * 2000-06-20 2004-02-17 Sony Corporation Semiconductor laser
GB2370883A (en) * 2001-01-08 2002-07-10 Bookham Technology Plc Optical circuit device with barrier to absorb stray light
US7609737B2 (en) * 2003-07-10 2009-10-27 Nichia Corporation Nitride semiconductor laser element
JP3738849B2 (ja) * 2003-08-07 2006-01-25 セイコーエプソン株式会社 面発光型半導体レーザ、光モジュール、ならびに光伝達装置
JP2010021430A (ja) * 2008-07-11 2010-01-28 Sumitomo Electric Ind Ltd 半導体光素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2126462A5 (en]) * 1969-07-09 1972-10-06 Radiotechnique Compelec
JPS5598880A (en) * 1979-01-20 1980-07-28 Nec Corp Light transmitting/receiving semiconductor device
JPS55108773U (en]) * 1979-01-24 1980-07-30
US4359774A (en) * 1980-11-04 1982-11-16 Rca Corporation Light emitting device

Also Published As

Publication number Publication date
JPS5893390A (ja) 1983-06-03
US4607368A (en) 1986-08-19

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